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1

Reliability Characterization of Au–In Transient Liquid Phase Bonding Through Electrical Resistivity Measurement

Grummel, Brian J., Mustain, Habib A., Shen, Zheng John, Elmes, John C., Hefner, Allen R.

Journal:

IEEE Transactions on Components Packaging and Manufacturing Technology

Year:

2015

Language:

english

File:

PDF, 1.99 MB

english, 2015

2

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers

Sundaresan, Siddarth, Jeliazkov, Stoyan, Issa, Hany, Grummel, Brian, Singh, Ranbir

Year:

2014

Language:

english

File:

PDF, 867 KB

english, 2014

3

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Reliability study of Au-In transient liquid phase bonding for SiC power semiconductor packaging

Grummel, Brian, Mustain, Habib A., Shen, Z. John, Hefner, Allen R.

Year:

2011

Language:

english

File:

PDF, 2.09 MB

english, 2011

4

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Silicon carbide high-temperature packaging module fabrication

Brokaw, Wendell, Elmes, John, Grummel, Brian, Shen, Z. John, Wu, Thomas X.

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

5

Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

MRS Proceedings

Year:

2014

Language:

english

File:

PDF, 752 KB

english, 2014

6

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Sundaresan, Siddarth G., Jeliazkov, Stoyan, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 596 KB

english, 2014

7

Improvement of the Current Gain Stability of SiC Junction Transistors

Sundaresan, Siddarth, Grummel, Brian, Hamilton, Dean, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 840 KB

english, 2015

8

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Comparison of energy losses in high-current 1700 V switches

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Year:

2015

File:

PDF, 573 KB

2015

9

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Short circuit robustness of 1200 V SiC switches

Singh, Ranbir, Grummel, Brian, Sundaresan, Siddarth

Year:

2015

File:

PDF, 651 KB

2015

10

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Switching and robustness analysis of 10 kV SiC BJTs

Singh, Ranbir, Jeliazkov, Stoyan, Grummel, Brian, Sundaresan, Siddarth

Year:

2015

File:

PDF, 538 KB

2015

11

Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.38 MB

english, 2016

12

Comparison of Energy Losses in High-Current 1700 V Switches

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 690 KB

english, 2016

13

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 757 KB

english, 2016